| PART |
Description |
Maker |
| KU3600N10D |
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
|
KEC(Korea Electronics)
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| KU047N08P |
N-ch Trench MOS FET
|
Korea Electronics (KEC)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU035N06P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU047N08P KU047N08P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU045N10P |
N-ch Trench MOS FET
|
KEC
|
| KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| VT60L45PW |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W |
Trench MOS Schottky technology
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
